Design of compositionally graded contact layers for MOCVD grown high Al-content AlGaN transistors

Doping of high-Al-content AlGaN grown by MOCVD

................................................................................................................................... iii Populärvetenskaplig sammanfattning .................................................................................... v Preface ......................................................................................................................................

Strain and morphology compliance during the intentional doping of high-Al-content AlGaN layers

GaAsP/InGaP heterojunction bipolar transistors grown by MOCVD

Heterojunction bipolar transistors with GaAsxP1-x bases and collectors and InyGa1-yP emitters were grown on GaAs substrates via metalorganic chemical vapor deposition (MOCVD), fabricated using conventional techniques, and electrically tested. Four different GaAsxP1-x compositions were used, ranging from x = 0.825 to x = 1 (GaAs), while the InyGa1-yP composition was adjusted to remain lattice-ma...

Technology focus: GaN HEMTs

has been developing III-nitride double heterostructures (DHs) with indium gallium nitride (InGaN) channels with a view to high-electron-mobility transistors (HEMTs) [Yi Zhao et al, Appl. Phys. Lett., vol105, p223511, 2014]. The resulting structures boast the highest reported mobility for InGaN channels and superior transport at high temperature, according to the research team. Nitride semicondu...

Passivated AlGaN / GaN High Electron Mobility Transistors

AlGaN/GaN high electron mobility transistors (HEMTs) passivated with LPCVD SiyNz and AlxSiyNz were fabricated side-by-side, and their performance compared in DC, small-signal, and large-signal test environments. AlxSiyNz passivated devices measured a reduced dependence of source resistance with drain current density, 1.5 x the breakdown voltage, and an increased microwave output power and power...